Samsung

Samsung SSD M.2 NVMe PCIe Gen4 1TB 990 EVO PLUS

Order Code: 30587
Samsung

Samsung SSD M.2 NVMe PCIe Gen4 1TB 990 EVO PLUS

Order Code: 30587
  • Type: SSD
  • Form Factor: M.2''
  • Capacity: 1TB
  • Use: Internal
  • Series: 990 EVO PLUS
Stock Level: Out of stock
Price €279.00

Turn up your PC’s capabilities with the Samsung 990 EVO Plus. Delivering near-flagship sequential read speeds up to 7,150 MB/s, this drive brings blazing-fast load times to gaming, video editing, and heavy business workflows. Built with Samsung’s latest 8th-generation V-NAND technology and an advanced 5nm controller, it delivers up to a 50% performance boost over the standard 990 EVO—giving you premium speed without the premium price tag.

  • Spectacular Everyday Speed: Blast through heavy data transfers and open massive files instantly with sequential read/write speeds up to 7,150 / 6,300 MB/s.

  • Innovative Hybrid Interface (PCIe 4.0 / 5.0): Offers ultimate flexibility by operating at PCIe 4.0 x4 or PCIe 5.0 x2. By utilizing just two lanes on Gen 5 slots, it preserves system bandwidth and CPU lanes for your GPU while maintaining maximum speeds.

  • Exceptional Power Efficiency: Upgraded with a nickel-coated thermal controller, the 990 EVO Plus yields an incredible 73% increase in MB/s per watt over its predecessor. Stay focused on work or play without overheating or draining laptop batteries.

  • Intelligent TurboWrite 2.0: Features an expanded SLC cache region to seamlessly handle heavy graphics, modern AI tasks, and continuous bursts of massive file copies without dropping a sweat.

  • Samsung Magician Software: Effortlessly migrate data, monitor drive health, unlock performance optimization updates, and protect sensitive files with robust encryption tools.

  • Brand / Model Samsung 990 EVO Plus (MZ-V9S1T0BW)
  • Capacity 1TB (1,000 GB)
  • Form Factor M.2 (2280) Single-Sided
  • Interface PCIe Gen 4.0 x4 / 5.0 x2
  • Protocol NVMe 2.0
  • NAND Flash Type Samsung V-NAND 3-bit TLC (236-Layer V8)
  • Controller Samsung In-House Piccolo (5nm FinFET)
  • Cache Type DRAM-less with HMB (Host Memory Buffer) Support
  • Max Sequential Read Up to 7,150 MB/s
  • Max Sequential Write Up to 6,300 MB/s
  • Random Read (4KB, QD32) Up to 850,000 IOPS
  • Random Write (4KB, QD32) Up to 1,350,000 IOPS
  • Data Security AES 256-bit Full Disk Encryption, TCG/Opal V2.0
  • Endurance (Lifespan) 600 TBW (Total Bytes Written)
  • Mean Time Between Failures 1.5 Million Hours 
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